hzm6.2zwa silicon epitaxial planar zener diode for surge absorb ade-208-499(z) rev 0 features ? hzm6.2zwa has two devices, and can absorb external + and -surge. ? low capacitance (c=8.5pf max) and can protect esd of signal line. ? mpak package is suitable for high density surface mounting and high speed assembly. ordering information type no. laser mark package code hzm6.2zwa 62z mpak outline 1 cathode
2 cathode
3 anode (top view) 2 1 3
hzm6.2zwa 2 absolute maximum ratings (ta = 25c) item symbol value unit power dissipation pd *1 200 mw junction temperature tj 150 c storage temperature tstg -55 to +150 c note 1. two device total, see fig.2. electrical characteristics (ta = 25c) *1 item symbol min typ max unit test condition zener voltage v z 5.90 6.50 v i z = 5 ma, 40ms pulse reverse current i r 3 av r = 5.5v capacitance c 8.0 8.5 pf v r = 0v, f = 1 mhz dynamic resistance r d 60 w i z = 5 ma esd-capability *2 13 kv c =150pf, r = 330 w , both forward and reverse direction 10 pulse notes 1. per one device. 2. failure criterion ; i r 3 3 a at v r = 5.5v.
hzm6.2zwa 3 main characteristic t p rsm 10 10 1.0 10 10 1.0 10 10 10 10 10 4 3 2 -5 -4 -3 -2 -1 0 2 10 10 10 10 8 10 10 6 4 -6 -5 -4 -3 -2 250 200 150 100 50 200 150 100 50 0 0 1.0mm 0.8mm fig.2 power dissipation vs. ambient temperature ambient temperature ta ( c) power dissipation p d (mw) printed circuit board 25 62 1.6t mm material: glass epoxy resin+cu foil cu foil fig.1 zener current vs.zener voltage zener voltage vz (v) zener current iz (a) fig.3 surge reverse power ratings ta = 25 c
nonrepetitive time t (s) nonrepetitive surge reverses power p (w) rsm
hzm6.2zwa 4 main characteristic 1.0 10 10 10 10 4 3 2 10 10 10 10 10 1.0 -2 -1 2 3 fig.4 transient thermal impedance time t (s) transient thermal impedance z ( c/w) th
|
